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STW160N75F3N-Channel 75 V 120A (Tc) 330W (Tc) Through Hole TO-247-3

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ABRmicro #.ABR2045-STW160-931805
ManufacturerSTMicroelectronics
MPN #.STW160N75F3
Estimated Lead Time-
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DatasheetDatasheetSTx160N75F3(PDF)
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In Stock: 6
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Shipping DateNovember 15, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTW160
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6750 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 60A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx160N75F3
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW160N75F3 is an N-Channel MOSFET manufactured by STMicroelectronics, designed to handle a maximum voltage of 75V and a current up to 120A when properly heat-sinked, with a power dissipation capability of 330W. Packaged in a TO-247-3 through-hole case, this MOSFET features a gate charge of 85 nanocoulombs at 10V and a threshold voltage of 4V at 250 microamperes. It is optimized for high efficiency and performance in various electronic applications, offering robust power handling and thermal management due to its construction and specifications.
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