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STW12N120K5N-Channel 1200 V 12A (Tc) 250W (Tc) Through Hole TO-247-3

1:$8.3180

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ABRmicro #.ABR2045-STW12N-950744
ManufacturerSTMicroelectronics
MPN #.STW12N120K5
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx12N120K5(-2), STWA12N120K5(PDF)
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In Stock: 417
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.3180
Ext. Price$ 8.3180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.3180$8.3180
30$6.6370$199.1230
120$5.9380$712.5980
510$5.2400$2672.5280
1020$4.7160$4810.7660
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ K5
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTW12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1370 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance690mOhm @ 6A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx12N120K5(-2), STWA12N120K5
PCN Packaging
Standard outer labelling 15/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STW12N120K5 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for efficient power handling and switching. It boasts a maximum drain-source voltage of 1200 V, a continuous drain current of 12A at 25°C (Tc), and a maximum power dissipation of 250W (Tc). Housed in a TO-247-3 package, it is suitable for through-hole mounting. The MOSFET features a low drain-source on-state resistance of 690mOhm at an operational current of 6A and gate voltage of 10V, along with a gate threshold voltage of 5V, measured at a gate current of 100µA.
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