STW11NM80 STMicroelectronics

Image is for reference only, the actual product serves as the standard.

STW11NM80N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-247-3

1:$4.5540

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.

ABRmicro #.ABR2045-STW11N-915562

ManufacturerSTMicroelectronics

MPN #.STW11NM80

Estimated Lead Time16 Weeks

SampleGet Free Sample

Datasheet

STx11NM80(PDF)

For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.

Service

Guaranteed Authenticity

Technical Support

Fast Refund

Free Shipping (over $960)

Issue an Invoice

24/7 Manual Service

In Stock: 14

Shipped From Shenzhen or Hong Kong Warehouses

Min.&Mult.1

Packaging

Tube

Shipping DateNovember 10, 2024

* Quantity

Unit Price$ 4.5540

Ext. Price$ 4.5540

Add To Cart

Send Target Price

* Prices exclude tax, and all prices are in USD.

Price Gradients

Qty.Unit PriceExt. Price

1$4.5540$4.5540

30$3.6080$108.2400

120$3.0920$371.0400

510$2.7480$1401.4800

1020$2.3540$2401.0800

2010$2.2160$4454.1600

* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.

Related Parts

E-ULN2004AN/A

STMicroelectronics

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP

STP100N10F7$1.6490

STMicroelectronics

N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220

STU2NK100Z$1.8270

STMicroelectronics

N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK

STU75N3LLH6-SN/A

STMicroelectronics

N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

STW34NB20N/A

STMicroelectronics

N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3

STW69N65M5$6.6300

STMicroelectronics

N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3

STW9NK95Z$2.4530

STMicroelectronics

N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3

Technical Specifications

SeriesMDmesh™

Packaging

Tube

Lifecycle StatusActive

Base Product NumberSTW11

Continuous Drain Current (ID) @ 25°C11A (Tc)

Drain-to-Source Voltage (VDS)800 V

Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V

FET Feature-

FET TypeN-Channel

Gate Charge Total (Qg)(Max.)43.6 nC @ 10 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1630 pF @ 25 V

MfrSTMicroelectronics

Mounting StyleThrough Hole

Operating Temperature-65°C ~ 150°C (TJ)

Maximum Power Dissipation150W (Tc)

RDS(on) Drain-to-Source On Resistance400mOhm @ 5.5A, 10V

Package Type (Mfr.)TO-247-3

TechnologyMOSFET (Metal Oxide)

Gate-to-Source Voltage (Vɢs)±30V

VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA

Package / CaseTO-247-3

Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire

info@Abrmicro.com

Extended Links

Datasheets

STx11NM80