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STU5N52K3N-Channel 525 V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

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ABRmicro #.ABR2045-STU5N5-980926
ManufacturerSTMicroelectronics
MPN #.STU5N52K3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTB,STD,STF,STP,STU5N52K3(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperMESH3™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTU5N
Continuous Drain Current (ID) @ 25°C4.4A (Tc)
Drain-to-Source Voltage (VDS)525 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)545 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 2.2A, 10V
Package Type (Mfr.)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB,STD,STF,STP,STU5N52K3
Other Related Documents
STU5N52K3 View All Specifications
PCN Obsolescence/ EOL
Mult Dev OBS 3/Jul/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STU5N52K3 is a component manufactured by STMicroelectronics, designed as an N-Channel MOSFET with a voltage rating of 525 V and a current rating of 4.4 A when measured at the case temperature (Tc). It is capable of dissipating up to 70 Watts of power at the case temperature and is housed in a TO-251 (IPAK) through-hole package. This MOSFET features a gate threshold voltage of 10 V and a specified performance of 4.5 V at a test current of 50 µA. Additionally, it has an on-state resistance of 1.5 Ohms when operating at 2.2 A and 10 V, making it suitable for specific switching and amplification needs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.