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STT3P2UH7P-Channel 20 V 3A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

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ABRmicro #.ABR2045-STT3P2-1017822
ManufacturerSTMicroelectronics
MPN #.STT3P2UH7
Estimated Lead Time-
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DatasheetDatasheetSTT3P2UH7(PDF)
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In Stock: 3
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTT3P
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)4.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)510 pF @ 10 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 1.5A, 4.5V
Package Type (Mfr.)SOT-23-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STT3P2UH7
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STT3P2UH7 from STMicroelectronics is a P-Channel MOSFET designed for efficient power management in compact electronic devices. It operates at a maximum voltage of 20V and can handle a continuous current of up to 3A under specific conditions (Tc). The device is housed in a space-saving SOT-23-6 surface-mount package, making it suitable for high-density circuit layouts. Key electrical characteristics include an on-resistance of 100 milliohms at a gate-source voltage of 4.5V and a drain-source current of 1.5A. The MOSFET features a threshold voltage range accommodating low voltage operations, starting from 1.8V, ensuring versatility in circuit design. Additionally, it can dissipate up to 1.6W of power, adding to its suitability for efficient power handling applications.
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