ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STS4DNFS30LN-Channel 30 V 4A (Tc) 2W (Tc) Surface Mount 8-SOIC

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STS4DN-960089
ManufacturerSTMicroelectronics
MPN #.STS4DNFS30L
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTS4DNFS30L(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSTripFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTS4D
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)330 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Tc)
RDS(on) Drain-to-Source On Resistance55mOhm @ 2A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STS4DNFS30L
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STS4DNFS30L, manufactured by STMicroelectronics, is an N-Channel MOSFET designed for surface mount applications, housed in an 8-SOIC package. It is capable of handling a maximum drain-source voltage of 30 V and a continuous drain current of 4A. The component supports a power dissipation of up to 2W under appropriate conditions. It features a low total gate charge of 9 nC at 5 V, which allows for efficient switching performance. Additionally, it includes an isolated Schottky diode to facilitate its operation in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.