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STS17NH3LLN-Channel 30 V 17A (Tc) 2.7W (Tc) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-STS17N-1037160
ManufacturerSTMicroelectronics
MPN #.STS17NH3LL
Estimated Lead Time-
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DatasheetSTS17NH3LL(PDF)
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In Stock: 15
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Shipping DateNovember 17, 2024
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SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTS17
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1810 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.7W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 8.5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STS17NH3LL, manufactured by STMicroelectronics, is a surface-mount N-Channel MOSFET housed in an 8-SOIC package. It is designed to handle up to 30 V and provides a continuous current of 17A (with proper case conditions). The component has a power dissipation capacity of 2.7W when optimized for case temperatures. With a gate charge of 24 nC at 4.5 V, this MOSFET operates effectively at gate-source voltages of 4.5V and 10V, featuring a forward voltage drop of 1V at a drain current of 250µA.
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