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STS10PF30LP-Channel 30 V 10A (Tc) 2.5W (Tc) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-STS10P-927402
ManufacturerSTMicroelectronics
MPN #.STS10PF30L
Estimated Lead Time-
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DatasheetSTS10PF30L(PDF)
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In Stock: 16
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Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 15, 2024
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SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberSTS10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 5A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STS10PF30L is a P-Channel MOSFET from STMicroelectronics, designed for surface-mount applications with an 8-SOIC package. It supports a maximum voltage of 30 V and a current of 10 A when properly cooled at Tc conditions. The device can handle up to 2.5 W of power dissipation under the same conditions. It operates with a gate-source voltage of 4.5V and 10V, featuring a gate charge of 39 nC at 4.5 V. The STS10PF30L is suitable for various electronic applications requiring efficient switching performance.
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