Image is for reference only, the actual product serves as the standard.
STP9NM50NN-Channel 500 V 5A (Tc) 70W (Tc) Through Hole TO-220
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP9NM-1018667
ManufacturerSTMicroelectronics
MPN #.STP9NM50N
Estimated Lead Time-
SampleGet Free Sample
DatasheetSTx9NM50N(-1)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesMDmesh™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP9N
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance560mOhm @ 3.7A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP9NM50N is an N-channel MOSFET manufactured by STMicroelectronics, designed for high-voltage applications with a maximum voltage rating of 500 V and a current rating of 5A under specified conditions. This device is encased in a TO-220 package, suitable for through-hole mounting, and can dissipate up to 70W of power at standard case temperature. It features a gate-to-source threshold voltage of 4V at a gate current of 250µA and an on-resistance of 560mOhm at a drain current of 3.7A and a gate voltage of 10V. Additionally, it has a total gate charge of 20 nC when driven at 10 V, making it suitable for use in power management systems where efficient switching is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.