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STP9NK60ZFPN-Channel 600 V 7A (Tc) 30W (Tc) Through Hole TO-220FP
1:$1.0770
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP9NK-940141
ManufacturerSTMicroelectronics
MPN #.STP9NK60ZFP
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetST(B,P)9NK60Z(FP,-1)(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0770
Ext. Price$ 1.0770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.0770$53.8690
100$0.8860$88.6130
250$0.8640$215.9530
500$0.7500$375.0630
1250$0.6350$794.2190
2500$0.6050$1511.4060
5000$0.5820$2911.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP9NK60
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1110 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3 Full Pack
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP9NK60ZFP is a discreet N-channel MOSFET manufactured by STMicroelectronics. Designed for through-hole mounting, it is housed in a TO-220FP package. This MOSFET can handle a maximum drain-source voltage of 600 V and has a continuous drain current rating of 7 A at a case temperature (Tc). It has a maximum power dissipation of 30 W when operated at the same temperature. It operates effectively with a gate-source voltage threshold of 4.5 V at 100 µA and can sustain a gate-source voltage of up to ±30 V.
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