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STP8NM50NN-Channel 500 V 5A (Tc) 45W (Tc) Through Hole TO-220

1:$1.9410

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP8NM-951787
ManufacturerSTMicroelectronics
MPN #.STP8NM50N
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetST(D,P)8NM50N(PDF)
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In Stock: 691
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9410
Ext. Price$ 1.9410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9410$1.9410
50$1.5600$77.9880
100$1.2820$128.2440
500$1.0860$542.9380
1000$0.9210$921.1880
2000$0.8760$1751.0000
5000$0.8430$4212.8130
10000$0.8140$8138.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP8NM50
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)364 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance790mOhm @ 2.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(D,P)8NM50N
Other Related Documents
STP8NM50N View All Specifications
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP8NM50N is an N-channel MOSFET manufactured by STMicroelectronics, designed to handle a voltage of up to 500 V with a continuous current capacity of 5 A at specified case temperature (Tc). It dissipates power up to 45 W, also contingent on the case temperature. Encased in a TO-220 through-hole package, this MOSFET is engineered with a gate voltage rating of 10 V. It features a gate charge of 364 pF at a 50 V drain-source voltage and can withstand gate-source voltages up to ±25 V.
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