ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STP6N95K5N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole TO-220

1:$1.9580

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP6N9-995667
ManufacturerSTMicroelectronics
MPN #.STP6N95K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx6N95K5(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 126
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9580
Ext. Price$ 1.9580
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9580$1.9580
50$1.5760$78.7840
100$1.2970$129.7310
500$1.0970$548.2500
1000$0.9310$930.7500
2000$0.8840$1768.0000
5000$0.8510$4255.3130
10000$0.8220$8223.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSuperMESH5™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP6N95
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance1.25Ohm @ 3A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx6N95K5
Other Related Documents
STP6N95K5 View All Specifications
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP6N95K5 by STMicroelectronics is an N-channel power MOSFET designed for high voltage applications. It features a 950 V drain-source voltage and can handle a continuous current of 9A under specified testing conditions, while dissipating up to 90W of power. Manufactured in a TO-220 package, the device offers efficient thermal management and ease of mounting. It operates efficiently with a gate-source voltage of ±30V, drawing a gate leakage current of 100µA at a gate-source voltage of 5V. The MOSFET exhibits a typical on-resistance of 1.25 Ohm when conducting 3A at a gate-source voltage of 10V, ensuring minimal power loss and reliable performance in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.