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STP6N80K5N-Channel 800 V 4.5A (Tc) 85W (Tc) Through Hole TO-220

1:$0.9330

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP6N8-1014481
ManufacturerSTMicroelectronics
MPN #.STP6N80K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetST(B,D,I,P)6N80K5(PDF)
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In Stock: 113
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9330
Ext. Price$ 0.9330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.9330$932.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP6N80
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)255 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance1.6Ohm @ 2A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,D,I,P)6N80K5
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP6N80K5 is a power MOSFET manufactured by STMicroelectronics, featuring an N-channel configuration with a drain-source voltage rating of 800 volts and a continuous drain current of 4.5 amps under specified conditions. It is designed for through-hole mounting, presented in a TO-220 package which helps with efficient thermal management for its power dissipation capability of 85 watts. The device exhibits a gate charge of 7.5 nanocoulombs at a gate-source voltage of 10 volts, facilitating efficient switching performance.
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