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STP60NF10N-Channel 100 V 80A (Tc) 300W (Tc) Through Hole TO-220

1:$2.4360

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ABRmicro #.ABR2045-STP60N-926677
ManufacturerSTMicroelectronics
MPN #.STP60NF10
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetSTB60NF10(-1), STP60NF10(PDF)
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In Stock: 654
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.4360
Ext. Price$ 2.4360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4360$2.4360
50$1.9540$97.6970
100$1.6080$160.7560
500$1.3600$680.0000
1000$1.1550$1154.9380
2000$1.0970$2193.0000
5000$1.0550$5275.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP60
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)104 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4270 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 40A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB60NF10(-1), STP60NF10
Other Related Documents
STP60NF10 View All Specifications
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP60NF10 is a robust N-Channel MOSFET manufactured by STMicroelectronics, designed for high current and voltage applications. It features a drain-source voltage of 100 V and can handle a continuous drain current of up to 80A under specified conditions. The MOSFET is capable of dissipating 300W of power, making it suitable for demanding environments. Encased in a TO-220 package, it supports through-hole mounting, which enhances its thermal performance. Key electrical characteristics include a gate threshold voltage of 10V, with a low on-state resistance of 23mOhm at 40A and 10V, ensuring efficient conductivity when switched on.
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