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STP5NK40ZN-Channel 400 V 3A (Tc) 45W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP5NK-1015229
ManufacturerSTMicroelectronics
MPN #.STP5NK40Z
Estimated Lead Time-
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In Stock: 4
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP5N
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)305 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance1.8Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP5NK40Z is a discrete N-channel MOSFET manufactured by STMicroelectronics, characterized by a voltage rating of 400 V and a continuous drain current of 3A when mounted with adequate heat sinking. This component comes in a TO-220 package, a common through-hole mounting configuration, and can dissipate up to 45 watts under appropriate thermal conditions. It features a gate threshold voltage of 10V, a low gate drive current of 50µA at 4.5V, and a total gate charge of 17 nanocoulombs when driven at 10V, making it suitable for switching applications where efficiency and reliability are important.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.