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STP5N105K5N-Channel 1050 V 3A (Tc) 85W (Tc) Through Hole TO-220

1:$1.5900

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ABRmicro #.ABR2045-STP5N1-931762
ManufacturerSTMicroelectronics
MPN #.STP5N105K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetSTP5N105K5(PDF)
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In Stock: 686
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.5900
Ext. Price$ 1.5900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5900$1.5900
50$1.2790$63.9630
100$1.0520$105.1880
500$0.9500$474.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ K5
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP5N105
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)1050 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)210 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance3.5Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STP5N105K5
PCN Assembly/Origin
IPD/15/9124 20/Mar/2015
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP5N105K5 is a power MOSFET manufactured by STMicroelectronics, featuring an N-Channel configuration. This component is designed to handle a maximum voltage of 1050 V and a current of 3A at the case temperature (Tc). It can dissipate up to 85 watts of power, also measured at Tc. The MOSFET is housed in a TO-220 package, which is a common through-hole form factor ideal for various mounting scenarios. Additionally, the device exhibits a gate charge of 12.5 nanocoulombs at 10 volts and handles gate-source voltages up to ±30V, with a gate threshold voltage specified at 5V with a minuscule 100µA current.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.