STP4N150N-Channel 1500 V 4A (Tc) 160W (Tc) Through Hole TO-220
1:$4.4360
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ABRmicro #.ABR2045-STP4N1-1021179
ManufacturerSTMicroelectronics
MPN #.STP4N150
Estimated Lead Time13 Weeks
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Datasheet
STxx4N150(PDF)
STxx4N150(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.4360
Ext. Price$ 4.4360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.4360$4.4360
50$3.5180$175.8970
100$3.0150$301.5380
500$2.6810$1340.3440
1000$2.2940$2293.9380
2000$2.1600$4320.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerMESH™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP4N150
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)1500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation160W (Tc)
RDS(on) Drain-to-Source On Resistance7Ohm @ 2A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP4N150 is a semiconductor device by STMicroelectronics, featuring an N-channel configuration capable of handling voltages up to 1500 V and a current of 4A in Tc conditions. It offers a power dissipation capacity of 160 W in Tc, making it suitable for high voltage applications. This component is encapsulated in a TO-220 through-hole package, facilitating easy mounting onto circuit boards. Key electrical characteristics include a gate-source voltage of ±30V, a total gate charge of 50 nC at 10 V, and an input capacitance of 1300 pF at 25 V. These specifications enable efficient switching performance in electronic circuits.
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