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STP45NF06N-Channel 60 V 38A (Tc) 80W (Tc) Through Hole TO-220
1:$1.3280
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP45N-914892
ManufacturerSTMicroelectronics
MPN #.STP45NF06
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetSTP45NF06(PDF)
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In Stock: 1475
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
* Quantity
Unit Price$ 1.3280
Ext. Price$ 1.3280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3280$1.3280
50$1.0680$53.4000
100$0.8780$87.8000
500$0.7440$372.0000
1000$0.6310$631.0000
2000$0.5990$1198.0000
5000$0.5770$2885.0000
10000$0.5570$5570.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
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Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP45
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)980 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 19A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)