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STP360N4F6N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole TO-220

1:$2.6750

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ABRmicro #.ABR2045-STP360-981839
ManufacturerSTMicroelectronics
MPN #.STP360N4F6
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTI360N4F6, STP360N4F6(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 2.6750
Ext. Price$ 2.6750
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1$2.6750$2.6750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP360
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)340 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17930 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance1.8mOhm @ 60A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STI360N4F6, STP360N4F6
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP360N4F6 is a robust N-Channel MOSFET manufactured by STMicroelectronics, designed for high power applications with a voltage capacity of 40 V and a current rating of 120A at Tc. Encased in a TO-220 through-hole package, it accommodates a power dissipation of up to 300W at Tc, ensuring efficient thermal performance. Its key features include a low on-resistance of 1.8mOhm at a load of 60A and a gate-source voltage of 10V, and a significant input capacitance of 17930 pF at 25 V. This component is suitable for various electronic circuits requiring high power and efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.