STP35N60DM2N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-220
1:$4.6420
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ABRmicro #.ABR2045-STP35N-1039499
ManufacturerSTMicroelectronics
MPN #.STP35N60DM2
Estimated Lead Time16 Weeks
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Datasheet
STP35N60DM2(PDF)
STP35N60DM2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 4.6420
Ext. Price$ 4.6420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.6420$4.6420
50$3.6820$184.0780
100$3.1560$315.5630
500$2.8050$1402.5000
1000$2.4020$2402.3130
2000$2.2620$4524.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP35
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation210W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 14A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP35N60DM2 by STMicroelectronics is an N-Channel MOSFET designed for high power applications. It features a drain-source voltage rating of 600 volts and can handle a continuous drain current of 28 amperes at a case temperature (Tc). The device boasts a power dissipation capability of 210 watts at (Tc). It is encased in a TO-220 package, facilitating through-hole mounting. This MOSFET operates with a gate source voltage rating of ±25 volts and exhibits a threshold voltage of 5 volts at a test current of 250 microamperes.
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