STP33N60DM2N-Channel 600 V 24A (Tc) 190W (Tc) Through Hole TO-220
1:$3.6170
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ABRmicro #.ABR2045-STP33N-996815
ManufacturerSTMicroelectronics
MPN #.STP33N60DM2
Estimated Lead Time16 Weeks
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Datasheet
ST(B,P,W)33N60DM2(PDF)
ST(B,P,W)33N60DM2(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.6170
Ext. Price$ 3.6170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6170$3.6170
50$2.8670$143.3310
100$2.4580$245.7560
500$2.1830$1091.7190
1000$1.8700$1870.0000
2000$1.7610$3521.1250
5000$1.6890$8446.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP33
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1870 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 12A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP33N60DM2 is a discrete N-channel MOSFET manufactured by STMicroelectronics. It is designed for high voltage applications, offering a breakdown voltage of 600 V. The MOSFET can handle a continuous drain current of 24A when the case temperature is controlled optimally, and it dissipates up to 190W under certain thermal conditions. It is housed in a TO-220 package, making it suitable for through-hole mounting. The gate charge is rated at 43 nC when driven at 10 V, and the device presents an input capacitance of 1870 pF when measured at 100 V. This MOSFET operates efficiently with a gate-source voltage of up to 10V.
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