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STP30NM30NN-Channel 300 V 30A (Tc) 160W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP30N-948275
ManufacturerSTMicroelectronics
MPN #.STP30NM30N
Estimated Lead Time-
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP30N
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)75 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation160W (Tc)
RDS(on) Drain-to-Source On Resistance90mOhm @ 15A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP30NM30N is an N-channel MOSFET designed and manufactured by STMicroelectronics. It is capable of handling a maximum continuous drain current of 30A and operates with a drain-source voltage of up to 300V. This component can dissipate up to 160W of power when mounted to a suitable heat sink. Enclosed in a TO-220 package, the MOSFET is designed for through-hole mounting, making it suitable for various electronic applications. It features a gate threshold voltage of 10V and a typical input capacitance of 2500 pF at a testing condition of 50V. The STP30NM30N is designed for efficient switching performance and power handling, fitting well into circuitry that requires precise control of electrical flow.
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