STP30N10F7N-Channel 100 V 32A (Tc) 50W (Tc) Through Hole TO-220AB
1:$1.3860
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ABRmicro #.ABR2045-STP30N-966127
ManufacturerSTMicroelectronics
MPN #.STP30N10F7
Estimated Lead Time-
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Datasheet
STP30N10F7(PDF)
STP30N10F7(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3860
Ext. Price$ 1.3860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3860$1.3860
50$1.1140$55.6750
100$0.9170$91.6940
500$0.7760$387.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP30
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1270 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance24mOhm @ 16A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP30N10F7 is a power MOSFET manufactured by STMicroelectronics, designed for high efficiency in electronic switching applications. This N-channel MOSFET can handle a drain-source voltage of up to 100 V and continuous drain current of 32A, with a power dissipation capacity of 50W at the case temperature. It comes in a TO-220AB package, which is a commonly used through-hole configuration for power devices. The component's gate threshold voltage is ±20V, and it features a typical input capacitance of 1270 pF at 50 V, which influences its switching speed and performance in circuits.
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