ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STP2NK60ZN-Channel 600 V 1.4A (Tc) 45W (Tc) Through Hole TO-220

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP2NK-1013695
ManufacturerSTMicroelectronics
MPN #.STP2NK60Z
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTF2NK60Z(x)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP2N
Continuous Drain Current (ID) @ 25°C1.4A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)170 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance8Ohm @ 700mA, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STF2NK60Z(x)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP2NK60Z is a power MOSFET manufactured by STMicroelectronics, featuring a 600V N-channel configuration capable of handling a continuous current of 1.4A under specified conditions (Tc). It is housed in a TO-220 package, which supports through-hole mounting for ease of integration into various electronic circuits. The device is designed to dissipate up to 45W of power under optimal thermal conditions. Its gate threshold voltage is specified at 10V, with a gate-source cutoff voltage of 4.5V at a minimal current of 50µA. The MOSFET exhibits an on-state resistance of 8 Ohms when conducting a current of 700mA at a gate-source voltage of 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.