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STP2N105K5N-Channel 1050 V 1.5A (Tc) 60W (Tc) Through Hole TO-220

1:$1.4200

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP2N1-966530
ManufacturerSTMicroelectronics
MPN #.STP2N105K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetSTx2N105K5(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4200
Ext. Price$ 1.4200
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4200$1.4200
50$1.1410$57.0560
100$0.9390$93.9250
500$0.7940$396.8440
1000$0.6740$673.6250
2000$0.6410$1281.3750
5000$0.6160$3081.2500
10000$0.5960$5960.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ K5
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP2N105
Continuous Drain Current (ID) @ 25°C1.5A (Tc)
Drain-to-Source Voltage (VDS)1050 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)115 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance8Ohm @ 750mA, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx2N105K5
PCN Obsolescence/ EOL
Mult Dev OBS 3/Jul/2020Mult Dev Reinstate 6/Aug/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP2N105K5 is a TO-220 packaged N-Channel MOSFET manufactured by STMicroelectronics. It is capable of handling a maximum voltage of 1050 volts and a current of 1.5 amperes under controlled conditions (Tc). The component features a power dissipation capacity of 60 watts. It exhibits an input capacitance of 115 picofarads at 100 volts and has an on-state resistance of 8 ohms at a drain current of 750 milliamperes and a gate voltage of 10 volts. This metal-oxide-semiconductor field-effect transistor is designed for through-hole mounting.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.