ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STP240N10F7N-Channel 100 V 180A (Tc) 300W (Tc) Through Hole TO-220

1:$2.4280

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP240-1033104
ManufacturerSTMicroelectronics
MPN #.STP240N10F7
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetSTP240N10F7(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6493
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.4280
Ext. Price$ 2.4280
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4280$2.4280
50$1.9220$96.1030
100$1.6470$164.6880
500$1.6110$805.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP240
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)176 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12600 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3.2mOhm @ 60A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STP240N10F7
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP240N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, featuring a maximum drain-source voltage of 100V and a continuous drain current of 180A at a case temperature (Tc). It is capable of handling up to 300W of power dissipation, also measured at Tc. Encased in a TO-220 package, this component exhibits a total gate charge of 176 nC when driven at 10V. Moreover, it has a gate threshold voltage of 4.5V at 250µA, highlighting its capability for efficient switching in high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.