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STP21NM50NN-Channel 500 V 18A (Tc) 140W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP21N-1000810
ManufacturerSTMicroelectronics
MPN #.STP21NM50N
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTx21NM50N(-1)(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP21N
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1950 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 9A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx21NM50N(-1)
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP21NM50N is an N-channel MOSFET produced by STMicroelectronics, designed to handle high voltage applications with a maximum drain-source voltage of 500 volts and a continuous current rating of 18 amperes at its maximum case temperature. This device can dissipate up to 140 watts in its TO-220 package, ensuring efficient performance in heat-prone environments. With a gate threshold voltage of 4 volts at 250 microamperes and a typical input capacitance of 1950 picofarads at 25 volts, it offers balanced switching characteristics. The on-resistance is specified at 190 milliohms when conducting a drain current of 9 amperes with a gate voltage of 10 volts, facilitating efficient power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.