STP200NF03N-Channel 30 V 120A (Tc) 300W (Tc) Through Hole TO-220
1:$2.0770
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ABRmicro #.ABR2045-STP200-1037608
ManufacturerSTMicroelectronics
MPN #.STP200NF03
Estimated Lead Time-
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Datasheet
ST(B,P)200NF03(-1)(PDF)
ST(B,P)200NF03(-1)(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.0770
Ext. Price$ 2.0770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0770$2.0770
50$1.6470$82.3440
100$1.4120$141.2060
500$1.3810$690.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ III
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberSTP200
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4950 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 60A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP200NF03 is an N-channel MOSFET manufactured by STMicroelectronics. It is designed to handle a maximum voltage of 30 volts and can conduct a continuous current of up to 120 amperes at a case temperature (Tc). With a power dissipation capability of 300 watts under similar conditions, this MOSFET is housed in a TO-220 package suitable for through-hole mounting. Its key characteristics include a gate threshold voltage of 10 volts and a capacitance of 4950 picofarads at 25 volts, with a gate-source cutoff voltage of 4 volts at 250 microamperes. This MOSFET is intended for use in applications requiring efficient high current switching.
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