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STP16NM50NN-Channel 500 V 15A (Tc) 125W (Tc) Through Hole TO-220
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ABRmicro #.ABR2045-STP16N-935178
ManufacturerSTMicroelectronics
MPN #.STP16NM50N
Estimated Lead Time-
SampleGet Free Sample
DatasheetSTx16NM50N(PDF)
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In Stock: 14
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Shipping DateNovember 15, 2024
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SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP16N
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP16NM50N is a through-hole N-Channel MOSFET transistor manufactured by STMicroelectronics, characterized by its ability to handle voltages up to 500 V and currents up to 15 A at a case temperature (Tc). It features a TO-220 package, facilitating easy integration into a variety of electronic assemblies. With a power dissipation capability of 125 W at Tc, it offers a balance between performance and thermal management. The gate threshold voltage is specified at 4 V at a current of 250 µA, and it exhibits an input capacitance of 1200 pF when measured at 50 V. This MOSFET is primarily valued for its robustness and efficiency in high voltage applications.
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