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STP13NK50ZN-Channel 500 V 11A (Tc) 140W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP13N-990510
ManufacturerSTMicroelectronics
MPN #.STP13NK50Z
Estimated Lead Time-
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DatasheetDatasheetSTx13NK50Z(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP13N
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance480mOhm @ 6.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx13NK50Z
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP13NK50Z is a metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by STMicroelectronics. It features an N-channel configuration capable of handling a drain-source voltage of up to 500 volts and a continuous drain current of 11 amperes at the case temperature (Tc). The component is housed in a TO-220 through-hole package, supporting power dissipation of up to 140 watts at Tc. It has a drain-source on-resistance of 480 milliohms when subjected to a drain current of 6.5A and a gate-source voltage of 10 volts. Additionally, it can withstand gate-source voltages of ±30 volts, making it suitable for various high-voltage applications where efficient power management is crucial.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.