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STP12NM50NN-Channel 500 V 11A (Tc) 100W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP12N-980848
ManufacturerSTMicroelectronics
MPN #.STP12NM50N
Estimated Lead Time-
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In Stock: 7
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP12
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)940 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP12NM50N is an N-channel MOSFET developed by STMicroelectronics, designed for efficient power management applications. It operates with a drain-source voltage of 500V and supports a continuous drain current of up to 11A when temperature conditions are managed effectively. The device can dissipate up to 100W of power through its TO-220 package, which is commonly used for through-hole mounting. It features a gate charge of 30 nC at 10V and a low on-resistance of 380mOhm when conducting 5.5A at 10V, making it a reliable choice for high-voltage switching solutions.
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