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STP12NK80ZN-Channel 800 V 10.5A (Tc) 190W (Tc) Through Hole TO-220
1:$2.9610
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STP12N-911054
ManufacturerSTMicroelectronics
MPN #.STP12NK80Z
Estimated Lead Time-
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DatasheetSTx12NK80Z(PDF)
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In Stock: 438
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 10, 2024
* Quantity
Unit Price$ 2.9610
Ext. Price$ 2.9610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9610$2.9610
50$2.3440$117.2000
100$2.0090$200.9000
500$1.7860$893.0000
1000$1.5290$1529.0000
2000$1.4390$2878.0000
5000$1.3820$6910.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberSTP12
Continuous Drain Current (ID) @ 25°C10.5A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)87 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2620 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 5.25A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)