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STP12N65M2N-Channel 650 V 8A (Tc) 85W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-STP12N-953282
ManufacturerSTMicroelectronics
MPN #.STP12N65M2
Estimated Lead Time-
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DatasheetDatasheetSTP12N65M2(PDF)
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In Stock: 32
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP12
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)535 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 4A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STP12N65M2
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP12N65M2 is an N-channel MOSFET manufactured by STMicroelectronics, offering a breakdown voltage of 650V and a drain current of 8A under specified conditions. Housed in a TO-220 package, this MOSFET supports a power dissipation of up to 85W. It features a gate threshold voltage of 4V at a gate current of 250µA and a total gate charge of 16.7 nC at 10V. This semiconductor device is designed with metal-oxide technology, providing efficient switching capabilities for power electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.