STP10P6F6P-Channel 60 V 10A (Tc) 30W (Tc) Through Hole TO-220
1:$1.0760
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ABRmicro #.ABR2045-STP10P-1022511
ManufacturerSTMicroelectronics
MPN #.STP10P6F6
Estimated Lead Time-
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Datasheet
STx10P6F6(PDF)
STx10P6F6(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.0760
Ext. Price$ 1.0760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0760$1.0760
50$0.8670$43.3500
100$0.6870$68.7440
500$0.5820$291.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTP10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)340 pF @ 48 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP10P6F6 is a P-channel power MOSFET manufactured by STMicroelectronics, designed for through-hole mounting in a TO-220 package. It is capable of handling a maximum voltage of 60V and a continuous drain current of 10A at case temperature (Tc), with a power dissipation of up to 30W. The MOSFET features a gate-source voltage rating of ±20V and a typical input capacitance of 340 pF at 48 V. It also offers a low on-resistance of 160 milliohms at a drain current of 5A and gate voltage of 10V, making it suited for efficient power management and switching applications.
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