STP100N6F7N-Channel 60 V 100A (Tc) 125W (Tc) Through Hole TO-220
1:$1.3500
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ABRmicro #.ABR2045-STP100-1032486
ManufacturerSTMicroelectronics
MPN #.STP100N6F7
Estimated Lead Time26 Weeks
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Datasheet
STP100N6F7(PDF)
STP100N6F7(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.3500
Ext. Price$ 1.3500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3500$1.3500
50$1.0820$54.0810
100$0.8570$85.7440
500$0.7260$362.8440
1000$0.5910$590.7500
2000$0.5570$1113.5000
5000$0.5310$2656.2500
10000$0.5060$5057.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ F7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTP100
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1980 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance5.6mOhm @ 50A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STP100N6F7 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high efficiency in power management applications. It features a breakdown voltage of 60V and can handle a continuous current of up to 100A when properly cooled. The device is housed in a TO-220 through-hole package, allowing for enhanced thermal performance, and is capable of dissipating up to 125W of power under specified conditions. With an input capacitance of 1980 pF at 25V, and a threshold voltage of 4V at 250µA, it provides a robust performance for various electronic requirements where power handling and switching characteristics are critical.
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