STN3N40K3N-Channel 400 V 1.8A (Tc) 3.3W (Ta) Surface Mount SOT-223
1:$0.6580
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ABRmicro #.ABR2045-STN3N4-1036155
ManufacturerSTMicroelectronics
MPN #.STN3N40K3
Estimated Lead Time13 Weeks
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Datasheet
STN3N40K3(PDF)
STN3N40K3(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.6580
Ext. Price$ 0.6580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6580$0.6580
10$0.5740$5.7380
100$0.3970$39.7380
500$0.3320$165.7500
1000$0.2830$282.6250
2000$0.2520$503.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH3™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTN3
Continuous Drain Current (ID) @ 25°C1.8A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)165 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.3W (Ta)
RDS(on) Drain-to-Source On Resistance3.4Ohm @ 600mA, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-261-4, TO-261AA
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PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STN3N40K3, manufactured by STMicroelectronics, is a surface-mount N-channel MOSFET designed for efficient power management. Encased in a SOT-223 package, it supports a drain-source voltage of up to 400 V and a continuous current of 1.8 A at Tc. Its power dissipation is rated at 3.3 W when mounted. The MOSFET exhibits a capacitance of 165 pF at 50 V, an on-state resistance of 3.4 Ohms when conducting 600 mA at 10 V, and a gate charge of 11 nC at 10 V, making it a reliable component for handling high voltage applications within its specified parameters.
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