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STL8N80K5N-Channel 800 V 4.5A (Tc) 42W (Tc) Surface Mount PowerFlat™ (5x6)

1:$2.3420

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL8N8-968280
ManufacturerSTMicroelectronics
MPN #.STL8N80K5
Estimated Lead Time14 Weeks
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DatasheetDatasheetSTL8N80K5(PDF)
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In Stock: 1904
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3420
Ext. Price$ 2.3420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3420$2.3420
10$1.9680$19.6780
100$1.5930$159.2690
500$1.4150$707.6250
1000$1.2110$1211.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL8N80
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 3A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL8N80K5
PCN Assembly/Origin
IPD/15/9124 20/Mar/2015
PCN Packaging
Box Label Chg 28/Jul/2016Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL8N80K5 is a semiconductor device manufactured by STMicroelectronics, featuring an N-Channel MOSFET with an impressive breakdown voltage rating of 800 volts. It is designed to handle continuous currents of up to 4.5A when mounted on a suitable heatsink and can dissipate 42 watts of power under specified thermal conditions. Housed in a compact PowerFlat™ (5x6) surface mount package, this MOSFET offers efficient space utilization in electronic designs. Key electrical characteristics include a gate threshold voltage of 10 volts, a maximum gate-to-source voltage of ±30 volts, and an input capacitance of 450 pF at 100 volts, indicating its suitability for various switching applications within its voltage and current constraints.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.