STL8N10LF3N-Channel 100 V 20A (Tc) 4.3W (Ta), 70W (Tc) Surface Mount PowerFlat™ (5x6)
1:$1.5730
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ABRmicro #.ABR2045-STL8N1-955671
ManufacturerSTMicroelectronics
MPN #.STL8N10LF3
Estimated Lead Time26 Weeks
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Datasheet
STL8N10LF3(PDF)
STL8N10LF3(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5730
Ext. Price$ 1.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5730$1.5730
10$1.3050$13.0480
100$1.0370$103.7000
500$0.8790$439.3440
1000$0.7460$745.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ III
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL8
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20.5 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)970 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation4.3W (Ta), 70W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance35mOhm @ 4A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerVDFN
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL8N10LF3 is an N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power management in various electronic circuits. Encased in a PowerFlat™ (5x6) surface-mount package, it handles a drain-source voltage up to 100V and a continuous drain current of 20A under specified conditions. The device demonstrates a maximum power dissipation of 4.3W at ambient temperature and 70W under case conditions, ensuring effective thermal performance. It features a total gate charge of 20.5 nC at 10V and a typical input capacitance of 970 pF at 25V, offering a balanced trade-off between switching speed and energy efficiency.
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