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STL75NH3LLN-Channel 30 V 75A (Tc) 60W (Tc) Surface Mount PowerFlat™ (5x6)

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ABRmicro #.ABR2045-STL75N-952593
ManufacturerSTMicroelectronics
MPN #.STL75NH3LL
Estimated Lead Time-
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DatasheetDatasheetSTL75NH3LL(PDF)
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In Stock: 19
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTL75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1810 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 10A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL75NH3LL
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL75NH3LL is an N-Channel MOSFET manufactured by STMicroelectronics, designed for surface mount applications in a compact PowerFlat™ (5x6) package. It is capable of handling a continuous drain current of 75A at a case temperature of 30V and dissipating 60W at the same temperature. The device features a gate threshold voltage of 4.5V and 10V, with a typical input capacitance of 1810 pF at 25 V. It also delivers a forward voltage of 1V when subjected to a current of 250µA. This MOSFET is well-suited for applications requiring efficient power handling in a compact form factor.
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