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STL75N8LF6N-Channel 80 V 75A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6)

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ABRmicro #.ABR2045-STL75N-1001253
ManufacturerSTMicroelectronics
MPN #.STL75N8LF6
Estimated Lead Time-
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In Stock: 14
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTL75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)125 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6895 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance7.4mOhm @ 9A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+21V, -16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL75N8LF6 is a power MOSFET manufactured by STMicroelectronics, designed as an N-Channel device with a maximum voltage rating of 80V and a current capacity of 75A. It offers a low on-state resistance of 7.4mOhm at 9A and 10V, enhancing efficiency in switching applications. The device is encapsulated in a compact PowerFlat™ (5x6) surface mount package, allowing for efficient power dissipation up to 80W under specified thermal conditions. It features a gate threshold voltage range of +21V to -16V and a capacitance of 6895 pF at 25V, making it suitable for high-frequency operations.
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