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STL6N3LLH6N-Channel 30 V 13A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)

1:$0.6420

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ABRmicro #.ABR2045-STL6N3-1013855
ManufacturerSTMicroelectronics
MPN #.STL6N3LLH6
Estimated Lead Time26 Weeks
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DatasheetDatasheetSTL6N3LLH6(PDF)
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In Stock: 1647
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6420
Ext. Price$ 0.6420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6420$0.6420
10$0.5570$5.5680
100$0.3850$38.4630
500$0.3220$160.9690
1000$0.2740$274.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL6N3
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)283 pF @ 24 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 3A, 10V
Package Type (Mfr.)PowerFlat™ (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA (Min)
Package / Case6-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL6N3LLH6
Other Related Documents
STL6N3LLH6 View All Specifications
PCN Packaging
Box Label Chg 28/Jul/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL6N3LLH6 is a surface mount N-channel MOSFET from STMicroelectronics, designed for efficient performance in compact spaces. It can handle a drain-source voltage of 30V and a continuous drain current of up to 13A under specified temperature conditions. The device features a low total gate charge of 3.6 nanocoulombs when driven at 4.5 volts, and a capacitance of 283 picofarads at 24 volts, helping to optimize switching performance. Housed in a PowerFlat™ (2x2) package, this MOSFET supports power dissipation up to 2.4 watts when connected to an appropriately rated thermal path. These specifications make it suitable for high efficiency and compact electronics designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.