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STL5N80K5N-Channel 800 V 3A (Tc) 38W (Tc) Surface Mount PowerFlat™ (5x6) VHV
1:$0.6860
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STL5N8-942231
ManufacturerSTMicroelectronics
MPN #.STL5N80K5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetSTL5N80K5(PDF)
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In Stock: 137
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6860
Ext. Price$ 0.6860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.6860$2059.1250
6000$0.6600$3958.8750
9000$0.6390$5747.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesMDmesh™ K5
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberSTL5N80
Continuous Drain Current (ID) @ 25°C3A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)177 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.75Ohm @ 2A, 10V
Package Type (Mfr.)PowerFlat™ (5x6) VHV
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL5N80K5 is an N-channel MOSFET manufactured by STMicroelectronics. It features a maximum voltage rating of 800 V and a drain current of 3A when the case temperature is controlled. This surface-mounted device comes in a PowerFlat™ (5x6) package and can dissipate power up to 38W with an appropriate heat sink. The MOSFET has an on-resistance of 1.75 Ohms at a current of 2A and a gate-source voltage of 10V. It also exhibits a total gate charge of 5 nC at 10V and an input capacitance of 177 pF at 100V, making it suitable for high-voltage applications that require efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.