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STL45N65M5N-Channel 650 V 3.8A (Ta), 22.5A (Tc) 2.8W (Ta), 160W (Tc) Surface Mount PowerFLAT™ (8x8)
1:$5.3860
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ABRmicro #.ABR2045-STL45N-960882
ManufacturerSTMicroelectronics
MPN #.STL45N65M5
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetSTL45N65M5(PDF)
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In Stock: 18
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.3860
Ext. Price$ 5.3860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.3860$5.3860
10$4.6130$46.1340
100$3.8440$384.4130
500$3.3920$1695.7500
1000$3.0530$3052.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL45
Continuous Drain Current (ID) @ 25°C3.8A (Ta), 22.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)82 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3470 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 160W (Tc)
RDS(on) Drain-to-Source On Resistance86mOhm @ 14.5A, 10V
Package Type (Mfr.)PowerFLAT™ (8x8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL45N65M5 is an N-channel MOSFET manufactured by STMicroelectronics. It is designed to handle voltages up to 650 V and features a current rating of 3.8A when at ambient temperature (Ta) and 22.5A when mounted on a case (Tc). The power dissipation capability is specified as 2.8W at ambient temperature and 160W at case temperature. Encased in a compact PowerFLAT™ (8x8) surface mount package, it allows for efficient thermal management in high-density applications. The device also offers a gate-to-source voltage tolerance of ±25V and has an input capacitance of 3470 pF at 100 V, with a gate threshold voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.