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STL40N75LF3N-Channel 75 V 40A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)
1:$1.3350
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ABRmicro #.ABR2045-STL40N-971833
ManufacturerSTMicroelectronics
MPN #.STL40N75LF3
Estimated Lead Time26 Weeks
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DatasheetSTL40N75LF3(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3350
Ext. Price$ 1.3350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3350$1.3350
10$1.1100$11.1030
100$0.8840$88.4000
500$0.7470$373.4690
1000$0.6350$635.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesSTripFET™ III
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL40
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 20A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+20V, -16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-PowerVDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL40N75LF3 from STMicroelectronics is an N-Channel MOSFET featuring a maximum drain-source voltage of 75 V and a continuous drain current of 40A at case temperature (Tc). It exhibits a power dissipation of 75W (Tc) and is designed for surface mounting using a PowerFlat™ (5x6) package. The component is characterized by a gate charge of 12 nC at 5 V and a drain-source on-state resistance with a threshold voltage of 1V at a test current of 250µA. This MOSFET boasts efficient switching due to its compact construction with a gate-source voltage driving capability of 5V and 10V.
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