STL3N10F7N-Channel 100 V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
1:$0.5300
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ABRmicro #.ABR2045-STL3N1-941054
ManufacturerSTMicroelectronics
MPN #.STL3N10F7
Estimated Lead Time26 Weeks
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Datasheet
STL3N10F7(PDF)
STL3N10F7(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5300
Ext. Price$ 0.5300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5300$0.5300
10$0.4630$4.6330
100$0.3210$32.0880
500$0.2680$133.8750
1000$0.2270$227.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL3
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)408 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.4W (Tc)
RDS(on) Drain-to-Source On Resistance70mOhm @ 2A, 10V
Package Type (Mfr.)PowerFlat™ (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / Case6-PowerWDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL3N10F7 is a surface mount N-channel MOSFET manufactured by STMicroelectronics, designed to handle up to 100 V and a current of 4 A when properly cooled. It is encapsulated in a compact PowerFlat™ (2x2) package which optimizes performance in space-constrained applications. The device operates with a power dissipation capacity of 2.4 W at the case temperature and features a low on-resistance of 70 milliohms at a drain current of 2 A and a gate-source voltage of 10 V. The MOSFET also exhibits a gate charge of 408 pF when measured at 25 V. This combination of characteristics makes the STL3N10F7 suitable for a variety of switching tasks where efficiency and size are critical considerations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.