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STL35N75LF3N-Channel 75 V 32A (Tc) 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
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ABRmicro #.ABR2045-STL35N-999787
ManufacturerSTMicroelectronics
MPN #.STL35N75LF3
Estimated Lead Time-
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DatasheetSTL35N75LF3(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTL35
Continuous Drain Current (ID) @ 25°C32A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 4A, 10V
Package Type (Mfr.)PowerFlat™ (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / Case8-PowerVDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL35N75LF3 is an N-Channel power MOSFET manufactured by STMicroelectronics, designed for efficient surface mounting with its PowerFlat™ (3.3x3.3) package. It operates with a maximum voltage rating of 75V and can handle a continuous current of 32A at a case temperature (Tc). The component is capable of dissipating up to 50W of power, also at Tc. It features an on-state resistance of 25 milliohms when conducting 4A of current at 10V gate-source voltage and has a threshold voltage of 2.4V at a drain current of 250µA. Additionally, it can tolerate gate-source voltages in the range of ±20V.
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