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STL35N6F3N-Channel 60 V 35A (Tc) 5W (Ta), 80W (Tc) Surface Mount PowerFlat™ (5x6)
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ABRmicro #.ABR2045-STL35N-934831
ManufacturerSTMicroelectronics
MPN #.STL35N6F3
Estimated Lead Time-
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DatasheetSTL35N6F3(PDF)
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In Stock: 7
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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SeriesSTripFET™ III
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTL35
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation5W (Ta), 80W (Tc)
RDS(on) Drain-to-Source On Resistance22mOhm @ 3A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerVDFN
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL35N6F3 by STMicroelectronics is a surface-mount N-Channel MOSFET designed for efficient power management. Encased in the compact PowerFlat™ (5x6) package, this component supports a drain-source voltage of up to 60V and a continuous drain current of 35A when used with a suitable heat sink (Tc), offering flexibility in power handling with a maximum power dissipation of 80W (Tc) or 5W (Ta). It features a low drain-source on-state resistance of just 22 milliohms at 3A with 10V gate-source voltage, ensuring high performance with minimal power loss. Additionally, it has a threshold voltage of 4V at 250µA, providing secure switching characteristics.
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