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STL33N60M2N-Channel 600 V 22A (Tc) 190W (Tc) Surface Mount PowerFlat™ (8x8) HV

1:$3.2830

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ABRmicro #.ABR2045-STL33N-951030
ManufacturerSTMicroelectronics
MPN #.STL33N60M2
Estimated Lead Time16 Weeks
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DatasheetDatasheetSTL33N60M2(PDF)
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In Stock: 55
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Unit Price$ 3.2830
Ext. Price$ 3.2830
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1$3.2830$3.2830
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II Plus
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL33
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance135mOhm @ 10.75A, 10V
Package Type (Mfr.)PowerFlat™ (8x8) HV
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL33N60M2
PCN Assembly/Origin
IPD/15/9187 17/Apr/2015
PCN Design/Specification
STLYYY 22/Dec/2020STx33N60M2 Datasheet Chg 31/May/2019
PCN Packaging
Material Barrier Bag 17/Dec/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL33N60M2 from STMicroelectronics is a high-voltage N-channel MOSFET designed for power applications. It can handle a maximum voltage of 600 V and a continuous current of 22 A under specified thermal conditions. With a power dissipation capacity of 190 W, this MOSFET is housed in a compact PowerFlat™ (8x8) HV surface mount package, offering space-saving benefits. It features a gate-source voltage rating of ±25 V and operates with a gate threshold voltage of 4 V at 250 µA, making it suitable for efficient switching purposes.
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