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STL30N10F7N-Channel 100 V 30A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

1:$0.7270

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ABRmicro #.ABR2045-STL30N-1025192
ManufacturerSTMicroelectronics
MPN #.STL30N10F7
Estimated Lead Time26 Weeks
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DatasheetDatasheetSTL30N10F7(PDF)
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In Stock: 4066
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.7270
Ext. Price$ 0.7270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7270$0.7270
10$0.5910$5.9080
100$0.4600$46.0060
500$0.3900$194.9690
1000$0.3860$385.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL30
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)920 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 4A, 10V
Package Type (Mfr.)PowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STL30N10F7
PCN Design/Specification
Mult Dev Mark Chg 9/Sep/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL30N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics that is designed for high-efficiency power management in compact, surface-mount applications. It features a drain-source voltage (V_ds) of 100V and can handle a continuous drain current of up to 30A under case temperature conditions. The device is capable of dissipating 75W of power, making it suitable for use in power-sensitive environments. Encased in a PowerFlat™ (5x6) package, this MOSFET offers low on-resistance and efficient switching characteristics, with a gate threshold voltage of 4.5V at 250µA and a standard operation at 10V, which contributes to its reliable performance in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.