STL26NM60NN-Channel 600 V 2.7A (Ta), 19A (Tc) 125mW (Ta), 3W (Tc) Surface Mount PowerFlat™ (8x8) HV
1:$4.3010
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ABRmicro #.ABR2045-STL26N-948985
ManufacturerSTMicroelectronics
MPN #.STL26NM60N
Estimated Lead Time16 Weeks
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Datasheet
STL26NM60N(PDF)
STL26NM60N(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.3010
Ext. Price$ 4.3010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.3010$4.3010
10$3.6100$36.1040
100$2.9200$291.9750
500$2.5960$1297.8440
1000$2.2230$2222.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTL26
Continuous Drain Current (ID) @ 25°C2.7A (Ta), 19A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation125mW (Ta), 3W (Tc)
RDS(on) Drain-to-Source On Resistance185mOhm @ 10A, 10V
Package Type (Mfr.)PowerFlat™ (8x8) HV
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / Case8-PowerVDFN
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Datasheets
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PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STL26NM60N, manufactured by STMicroelectronics, is an N-Channel MOSFET designed for efficient handling of high voltages and currents. It features a maximum drain-source voltage of 600 V and can conduct a continuous current of up to 2.7A in ambient temperature conditions (Ta) and up to 19A in case temperature conditions (Tc). The component is housed in a PowerFlat™ (8x8) HV surface-mount package, offering optimized thermal and electrical performance. It has a gate threshold voltage of 10V, and a current of 250µA can pass through the gate at a voltage of 5V. Additionally, it has an input capacitance of 1800 pF measured at 50 V, providing efficient switching characteristics.
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